Samsung researchers have developed microprocessor using the Graphene-Silicon Schottky barrier as they can easily control electron flow by increasing or decreasing the height of the barrier.
Samsung also manufactured a basic logic gate device and verified that this logic gate can effectively perform one function. The basic procedure the device can manage is adding.
The transistor-like gate called a Barristor.
Samsung researcher’s institute has owned other 9 major Graphene-related patents and it is only current company who has built a working microprocessor using Graphene.
Graphene is a material that permits electrons to move through it 200 times easier than currently used semiconductor silicon.
If we can create a microprocessor using Graphene than we can build CPU which can run at 300 GHz speeds. So, researchers have achieved half of the normal Graphene electron mobility in making microprocessor.
IBM has predicted theoretical that we can create 1000 GHz microprocessor using Graphene.
Making microprocessor using Graphene is little tough as it is a semi-metal and we can not control electron flow in a semi-metal.
We can use cooling solutions to control electron flow in Graphene because electron can not pass through it. But the higher electron mobility might help dissipate the heat energy faster in a cooling base.
We can produce microprocessor using combination of Silicon and Graphene but it does not produce desirable results.
We can transform Graphene in a semiconductor as it can effectively reduce free electron mobility in this semimetal and this technology has successfully used for Silicene transformation.
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